1. Ua ntej - kev kho
-} Substrate Tu: Ultrasonic degreasing + Plasma Tu (Fais Fab 50-200W).
{{0- clamping thiab muab: xyuas kom meej tias qhov kev ncua deb ntawm cov txheej txheem ntawm cov txheej txheem yog 20-50cm (cuam tshuam rau cov ris tsho sib txawv ntawm zaj duab xis tuab).
2. Txheej theem
{{0- Ua ntej {1}- sputtering: qhia tus nqi argon (txaus 10-50sccm) tshem tawm oxides ntawm lub hom phiaj.
- Tshaj Lij Tshaj Tawm:
-}} evaporation txheej: tus nqi 0.1-10nm / s (Electron nqaj fais fab 5-20kw).
{- hlauetron sputtering: Deposition tus nqi 0.01-1μm / min (roj siab 0.1-1pa).
3. Post - kev kho
{{0 {}} annerting thiab ntxiv dag zog (200-400 degree, 1-2 teev) txhawm rau txhim kho cov yeeb yaj kiab adhesion (khawb ntau dua lossis sib npaug rau 5n).
